bdx33, bdx33a, bdx33b, bdx33c, BDX33D npn silicon power darlingtons
1 august 1993 - revised september 2002 specifications are subject to change without notice. designed for complementary use with bdx34, bdx34a, bdx34b, bdx34c and bdx34d 70 w at 25c case temperature 10 a continuous collector current minimum h fe of 750 at 3 v, 3 a absolute maximum ratings at 25c case temperature (unless otherwise noted) notes: 1. derate linearly to 150c case temperature at the rate of 0.56 w/c. 2. derate linearly to 150c free air temperature at the rate of 16 mw/c. rating symbol value unit collector-base voltage (i e = 0) bdx33 bdx33a bdx33b bdx33c BDX33D v cbo 45 60 80 100 120 v collector-emitter voltage (i b = 0) bdx33 bdx33a bdx33b bdx33c BDX33D v ceo 45 60 80 100 120 v emitter-base voltage v ebo 5v continuous collector current i c 10 a continuous base current i b 0.3 a continuous device dissipation at (or below) 25c case temperature (see note 1) p tot 70 w continuous device dissipation at (or below) 25c free air temperature (see note 2) p tot 2w operating free air temperat ure r ange t j -65 to +150 c storage temperature range t stg -65 to +150 c operating free-air temperature range t a -65 to +150 c b c e to-220 package (top view) pin 2 is in electrical contact with the mounting base. mdtraca 1 2 3
bdx33, bdx33a, bdx33b, bdx33c, BDX33D npn silicon power darlingtons 2
august 1993 - revised september 2002 specifications are subject to change without notice. notes: 3. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2%. 4. these parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. electrical characteristics at 25c case temperature (unless otherwise noted) parameter test conditions min typ max unit v (br)ceo collector-emitter breakdown voltage i c = 100 ma i b = 0 (see note 3) bdx33 bdx33a bdx33b bdx33c BDX33D 45 60 80 100 120 v i ceo collector-emitter cut-off current v ce = 30 v v ce = 30 v v ce = 40 v v ce = 50 v v ce = 60 v v ce = 30 v v ce = 30 v v ce = 40 v v ce = 50 v v ce = 60 v i b =0 i b =0 i b =0 i b =0 i b =0 i b =0 i b =0 i b =0 i b =0 i b =0 t c = 100c t c = 100c t c = 100c t c = 100c t c = 100c bdx33 bdx33a bdx33b bdx33c BDX33D bdx33 bdx33a bdx33b bdx33c BDX33D 0.5 0.5 0.5 0.5 0.5 10 10 10 10 10 ma i cbo collector cut-off current v cb = 45 v v cb = 60 v v cb = 80 v v cb = 100 v v cb = 120 v v cb = 45 v v cb = 60 v v cb = 80 v v cb = 100 v v cb = 120 v i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 t c = 100c t c = 100c t c = 100c t c = 100c t c = 100c bdx33 bdx33a bdx33b bdx33c BDX33D bdx33 bdx33a bdx33b bdx33c BDX33D 1 1 1 1 1 5 5 5 5 5 ma i ebo emitter cut-off current v eb = 5 v i c =0 10 ma h fe forward current transfer ratio v ce = 3 v v ce = 3 v v ce = 3 v v ce = 3 v v ce = 3 v i c =4 a i c =4 a i c =3 a i c =3 a i c =3 a (see notes 3 and 4) bdx33 bdx33a bdx33b bdx33c BDX33D 750 750 750 750 750 v be(on) base-emitter voltage v ce = 3 v v ce = 3 v v ce = 3 v v ce = 3 v v ce = 3 v i c =4 a i c =4 a i c =3 a i c =3 a i c =3 a (see notes 3 and 4) bdx33 bdx33a bdx33b bdx33c BDX33D 2.5 2.5 2.5 2.5 2.5 v v ce(sat) collector-emitter saturation voltage i b = 8 ma i b = 8 ma i b = 6 ma i b = 6 ma i b = 6 ma i c = 4 a i c = 4 a i c = 3 a i c = 3 a i c = 3 a (see notes 3 and 4) bdx33 bdx33a bdx33b bdx33c BDX33D 2.5 2.5 2.5 2.5 2.5 v v ec parallel diode forward voltage i e = 8 a i b = 0 4 v
bdx33, bdx33a, bdx33b, bdx33c, BDX33D npn silicon power darlingtons 3
august 1993 - revised september 2002 specifications are subject to change without notice. ? voltage and current values s hown are nominal; exact values vary slightly with transistor parameters. thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 1.78 c/w r ja junction to free air thermal resist ance 62.5 c/w resistive-load-switching characteristics at 25c case tem perature parameter test conditions ? min typ max unit t on tu r n - o n t i m e i c = 3 a v be(off) = -3.5 v i b(on) = 12 ma r l = 10 ? i b(off) = -12 ma t p = 20 s, dc 2% 1s t off turn-off time 5s
bdx33, bdx33a, bdx33b, bdx33c, BDX33D npn silicon power darlingtons 4
august 1993 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 1. figure 2. figure 3. typical dc current gain vs collector current i c - collector current - a 05 10 10 h fe - typical dc current gain 50000 100 1000 10000 tcs130af t c = -40c t c = 25c t c = 100c v ce = 3 v t p = 300 s, duty cycle < 2% collector-emitter saturation voltage vs collector current i c - collector current - a 05 10 10 v ce(sat) - collector-emitter saturation voltage - v 05 10 15 20 tcs130ah t c = -40c t c = 25c t c = 100c t p = 300 s, duty cycle < 2% i b = i c / 100 base-emitter saturation voltage vs collector current i c - collector current - a 05 10 10 v be(sat) - base-emitter saturation voltage - v 05 10 15 20 25 30 tcs130aj t c = -40c t c = 25c t c = 100c i b = i c / 100 t p = 300 s, duty cycle < 2%
bdx33, bdx33a, bdx33b, bdx33c, BDX33D npn silicon power darlingtons 5
august 1993 - revised september 2002 specifications are subject to change without notice. thermal information figure 4. maximum power dissipation vs case temperature t c - case temperature - c 0 255075100125150 p tot - maximum power dissipation - w 0 10 20 30 40 50 60 70 80 tis130ab
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